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IXTA460P2 IXTP460P2
IXTQ460P2 IXTH460P2
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
14
24
2890
280
22
15
9
30
5
48
13
16
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.26 °C/W
R thCS
R thCS
TO-220
TO-3P & TO-247
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 12A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
400
19.6
3.9
24
96
1.3
A
A
V
ns
A
μ C
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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